Semiconductor behavior of polycrystalline oxide films on iron
Ballenger, Luke W.
Master of Arts
The semiconductor behavior of zone refined, 99.95% (MRC) and Armco iron oxides has been studied. The three types of iron were compared for stability and intensity of semiconductor properties. Also the influence of oxide thickness on semiconductor behavior was measured. The semiconductor characteristics were measured by polarization curves, with and without light and differential capacitance techniques. It was found that semiconductor properties and stability were influenced by impurities in the iron. The properties were not affected by small changes in impurity concentration, but the stability decreased with increasing impurity concentration for the thick iron oxides. The stability and semiconductor nature of the iron oxides was not greatly dependent on the oxide thickness. Thin oxides also displayed semiconductor behavior but to a lesser extent than the thick oxides.