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dc.contributor.advisor Hackerman, Norman
dc.creatorTanizawa, Yoshiaki
dc.date.accessioned 2018-12-18T21:20:21Z
dc.date.available 2018-12-18T21:20:21Z
dc.date.issued 1980
dc.identifier.urihttps://hdl.handle.net/1911/104283
dc.description.abstract The semiconducting properties of the passive films on copper have been investigated through capacitance, photoresponse and kinetic measurements. Mott-Schottky plots show that the passive films on copper are p-type semiconductors. The metal deficits form the electron acceptors, which give rise to p-type conductivity. The passive films show photovoltages under illumination. The band gaps of the anodic films and thermal oxides are similar to that of CuO (1.7 eV). The band gap of the film formed in CuSOi+ is close to that of Q12O (2.2 eV). The electron transfer between the passive electrodes and the redox couple shows diffusion controlled kinetics. The large exchange current is explained in terms of the formation of an accumulation layer in the valence band.
dc.format.extent 94 pp
dc.language.iso eng
dc.title Semiconducting properties of the passive films on copper
dc.identifier.digital RICE1915
dc.contributor.committeeMember Margrave, John L.;McLellan, Rex B.
dc.type.genre Thesis
dc.type.material Text
thesis.degree.department Chemistry
thesis.degree.discipline Natural Sciences
thesis.degree.grantor Rice University
thesis.degree.level Masters
thesis.degree.name Master of Arts
dc.format.digitalOrigin reformatted digital
dc.identifier.callno Thesis Chem. 1980 Tanizawa
dc.identifier.citation Tanizawa, Yoshiaki. "Semiconducting properties of the passive films on copper." (1980) Master’s Thesis, Rice University. https://hdl.handle.net/1911/104283.


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