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dc.contributor.advisor Dunning, F. Barry
dc.creatorJohnson, Bruce Elliot
dc.date.accessioned 2018-12-18T21:15:36Z
dc.date.available 2018-12-18T21:15:36Z
dc.date.issued 1996
dc.identifier.urihttps://hdl.handle.net/1911/103953
dc.description.abstract Spin polarized electron sources based on photoemission from GaAs are widely used. Several new advanced photocathodes are under development. In the present work we have investigated the use of cathodes based on epitaxially grown p-type GaAs(11) layers, which are 1 nm thick, as a source of electrons of known polarization. For photon radiation at 87 nm, we observed an electron spin polarization of 4. ± 2.5 %. This is similar to earlier measurements made in other laboratories suggesting that indeed such epilayers can be used as a new derivative standard for calibrating electron polarimeters.
dc.format.extent 66 pp
dc.language.iso eng
dc.title Spin polarized photoemission from GaAs and its application to electron polarimetry
dc.identifier.digital RICE1579
dc.contributor.committeeMember Walters, G. King;Lairson, Bruce M.
dc.type.genre Thesis
dc.type.material Text
thesis.degree.department Physics
thesis.degree.discipline Natural Sciences
thesis.degree.grantor Rice University
thesis.degree.level Masters
thesis.degree.name Master of Science
dc.format.digitalOrigin reformatted digital
dc.identifier.callno THESIS PHYS. 1996 JOHNSON
dc.identifier.citation Johnson, Bruce Elliot. "Spin polarized photoemission from GaAs and its application to electron polarimetry." (1996) Master’s Thesis, Rice University. https://hdl.handle.net/1911/103953.


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