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dc.contributor.authorJain, Achint
Bharadwaj, Palash
Heeg, Sebastian
Parzefall, Markus
Taniguchi, Takashi
Watanabe, Kenji
Novotny, Lukas
dc.date.accessioned 2018-09-26T14:52:37Z
dc.date.available 2018-09-26T14:52:37Z
dc.date.issued 2018
dc.identifier.citation Jain, Achint, Bharadwaj, Palash, Heeg, Sebastian, et al.. "Minimizing residues and strain in 2D materials transferred from PDMS." Nanotechnology, 29, (2018) IOP Publishing: https://doi.org/10.1088/1361-6528/aabd90.
dc.identifier.urihttps://hdl.handle.net/1911/102700
dc.description.abstract Integrating layered two-dimensional (2D) materials into 3D heterostructures offers opportunities for novel material functionalities and applications in electronics and photonics. In order to build the highest quality heterostructures, it is crucial to preserve the cleanliness and morphology of 2D material surfaces that come in contact with polymers such as PDMS during transfer. Here we report that substantial residues and up to ∼0.22% compressive strain can be present in monolayer MoS2 transferred using PDMS. We show that a UV-ozone pre-cleaning of the PDMS surface before exfoliation significantly reduces organic residues on transferred MoS2 flakes. An additional 200 ◦C vacuum anneal after transfer efficiently removes interfacial bubbles and wrinkles as well as accumulated strain, thereby restoring the surface morphology of transferred flakes to their native state. Our recipe is important for building clean heterostructures of 2D materials and increasing the reproducibility and reliability of devices based on them.
dc.language.iso eng
dc.publisher IOP Publishing
dc.rights Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/
dc.title Minimizing residues and strain in 2D materials transferred from PDMS
dc.type Journal article
dc.citation.journalTitle Nanotechnology
dc.citation.volumeNumber 29
dc.identifier.digital Jain-2018
dc.type.dcmi Text
dc.identifier.doihttps://doi.org/10.1088/1361-6528/aabd90
dc.identifier.pmid 29644983
dc.type.publication publisher version
dc.citation.articleNumber 265203


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Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Except where otherwise noted, this item's license is described as Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.