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dc.contributor.authorLi, Tingxin
Wang, Pengjie
Sullivan, Gerard
Lin, Xi
Du, Rui-Rui
dc.date.accessioned 2018-07-11T15:59:27Z
dc.date.available 2018-07-11T15:59:27Z
dc.date.issued 2017
dc.identifier.citation Li, Tingxin, Wang, Pengjie, Sullivan, Gerard, et al.. "Low-temperature conductivity of weakly interacting quantum spin Hall edges in strained-layer InAs/GaInSb." Physical Review B, 96, no. 24 (2017) American Physical Society: https://doi.org/10.1103/PhysRevB.96.241406.
dc.identifier.urihttps://hdl.handle.net/1911/102370
dc.description.abstract We report low-temperature transport measurements in strainedᅠInAs/Ga0.68In0.32Sbᅠquantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance for devices of various sizes are consistent with the theoretical expectation of a weakly interacting helical edge state. Moreover, we found that the magnetoresistance of the helical edge states is related to the edge interaction effect and the disorder strength.
dc.language.iso eng
dc.publisher American Physical Society
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.title Low-temperature conductivity of weakly interacting quantum spin Hall edges in strained-layer InAs/GaInSb
dc.type Journal article
dc.citation.journalTitle Physical Review B
dc.citation.volumeNumber 96
dc.citation.issueNumber 24
dc.type.dcmi Text
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.96.241406
dc.type.publication publisher version
dc.citation.articleNumber 241406(R)


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