Low-temperature conductivity of weakly interacting quantum spin Hall edges in strained-layer InAs/GaInSb
Li, Tingxin; Wang, Pengjie; Sullivan, Gerard; Lin, Xi; Du, Rui-Rui
We report low-temperature transport measurements in strainedﾠInAs/Ga0.68In0.32Sbﾠquantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance for devices of various sizes are consistent with the theoretical expectation of a weakly interacting helical edge state. Moreover, we found that the magnetoresistance of the helical edge states is related to the edge interaction effect and the disorder strength.