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Electrical characterizations of lithium niobate thin films in a metal-ferroelectric-semiconductor capacitor

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Title: Electrical characterizations of lithium niobate thin films in a metal-ferroelectric-semiconductor capacitor
Author: Wang, Xuguang
Advisor: Rabson, Thomas A.
Degree: Master of Science thesis
Abstract: A LiNbO3 thin film Metal-Ferroelectric-Semiconductor capacitor is analyzed with various electrical characterization methods for studying the polarization switching and the thin film conduction behavior. The polarization density vs. electric field (P-E) curve shows that the remnant polarization is 16.85muC/cm2 and the coercive field is 117.25 KV/cm when maximum applied field is 286.2KV/cm for a sinusoidal input waveform. The capacitance vs. voltage bias (C-V) curve further demonstrates that the polarization charge is the dominant charge in controlling the ferroelectric semiconductor interface property. The switching transient current curve from a dual polarity four pulses chain study (P-S) gives the switching time of the sample about 80--100ns. Current vs. voltage (I--V) curve is explained with a back-to-back Schottky barrier controlled conduction mechanism. These electrical characterization results demonstrate that LiNbO3 is a promising candidate for a Metal-Ferroelectric-Semiconductor-Field-Effect-Transistor (MFSFET) non-volatile non-destructive memory application.
Citation: Wang, Xuguang. (2002) "Electrical characterizations of lithium niobate thin films in a metal-ferroelectric-semiconductor capacitor." Masters Thesis, Rice University. http://hdl.handle.net/1911/17559.
URI: http://hdl.handle.net/1911/17559
Date: 2002

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