|
Title:
|
Polarization reversal in thin film lithium niobate on silicon |
|
Author:
|
Rost, Timothy Alan |
|
Advisor:
|
Rabson, Thomas A. |
|
Abstract:
|
The spontaneous polarization of thin film LiNbO$\sb3$ has been shown to be reversible with the application of an electric field at room temperature. This electric field is applied across the sample in the form of a voltage pulse, and polarization reversal is detected either as a photocurrent reversal, or as a current transient whose integrated area is proportional to the spontaneous polarization. For 80 mil$\sp2$ size areas of thickness.3 $\mu$m, the fastest switching speed was 500 ns. The samples consisted of a silicon substrate, a thin film of LiNbO$\sb3$ and a metal contact to form an MFS (metalferroelectric-semiconductor) structure. The LiNbO$\sb3$ film was formed by rf sputtering LiNbO$\sb3$ onto heated $\langle111\rangle$ silicon substrates. |
|
Citation:
|
Rost, Timothy Alan. "Polarization reversal in thin film lithium niobate on silicon." Masters Thesis, Rice University, ETD http://hdl.handle.net/1911/13463. |
|
Citable link to this page:
|
http://hdl.handle.net/1911/13463 |
|
Date:
|
1990 |
