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Polarization reversal in thin film lithium niobate on silicon

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Title: Polarization reversal in thin film lithium niobate on silicon
Author: Rost, Timothy Alan
Advisor: Rabson, Thomas A.
Degree: Master of Science thesis
Abstract: The spontaneous polarization of thin film LiNbO$\sb3$ has been shown to be reversible with the application of an electric field at room temperature. This electric field is applied across the sample in the form of a voltage pulse, and polarization reversal is detected either as a photocurrent reversal, or as a current transient whose integrated area is proportional to the spontaneous polarization. For 80 mil$\sp2$ size areas of thickness.3 $\mu$m, the fastest switching speed was 500 ns. The samples consisted of a silicon substrate, a thin film of LiNbO$\sb3$ and a metal contact to form an MFS (metalferroelectric-semiconductor) structure. The LiNbO$\sb3$ film was formed by rf sputtering LiNbO$\sb3$ onto heated $\langle111\rangle$ silicon substrates.
Citation: Rost, Timothy Alan. (1990) "Polarization reversal in thin film lithium niobate on silicon." Masters Thesis, Rice University. http://hdl.handle.net/1911/13463.
URI: http://hdl.handle.net/1911/13463
Date: 1990

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